型号:

IRLL024NPBF

RoHS:无铅 / 符合
制造商:International Rectifier描述:MOSFET N-CH 55V 3.1A SOT223
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IRLL024NPBF PDF
标准包装 80
系列 HEXFET®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 55V
电流 - 连续漏极(Id) @ 25° C 3.1A
开态Rds(最大)@ Id, Vgs @ 25° C 65 毫欧 @ 3.1A,10V
Id 时的 Vgs(th)(最大) 2V @ 250µA
闸电荷(Qg) @ Vgs 15.6nC @ 5V
输入电容 (Ciss) @ Vds 510pF @ 25V
功率 - 最大 1W
安装类型 表面贴装
封装/外壳 TO-261-4,TO-261AA
供应商设备封装 SOT-223
包装 管件
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